Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
7 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Length
3mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.1mm
Страна на произход
China
Детайли за продукта
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 1,94
€ 0,039 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
€ 1,94
€ 0,039 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
50
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
7 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Length
3mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.1mm
Страна на произход
China
Детайли за продукта


