N-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 Diodes Inc DMN2056U-7

Номер на артикул на RS: 133-3376Марка: DiodesZetex№ по каталога на производителя: DMN2056U-7
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Series

DMN2056U

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

85 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

940 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

4.3 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Детайли за продукта

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 0,309

Each (In a Pack of 50) (ex VAT)

N-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 Diodes Inc DMN2056U-7
Изберете тип опаковка

€ 0,309

Each (In a Pack of 50) (ex VAT)

N-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 Diodes Inc DMN2056U-7
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
50 - 450€ 0,309€ 15,47
500 - 950€ 0,139€ 6,95
1000 - 1950€ 0,107€ 5,37
2000 - 2950€ 0,103€ 5,14
3000+€ 0,092€ 4,61

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Series

DMN2056U

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

85 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

940 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

4.3 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Детайли за продукта

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more