Diodes Inc N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-23 DMN2004K-7

Номер на артикул на RS: 708-2425PМарка: DiodesZetex№ по каталога на производителя: DMN2004K-7
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

630 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

0.9 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Height

1.1mm

Minimum Operating Temperature

-65 °C

Детайли за продукта

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 3,69

€ 0,148 Each (Supplied on a Reel) (ex VAT)

Diodes Inc N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-23 DMN2004K-7
Изберете тип опаковка

€ 3,69

€ 0,148 Each (Supplied on a Reel) (ex VAT)

Diodes Inc N-Channel MOSFET, 630 mA, 20 V, 3-Pin SOT-23 DMN2004K-7

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

630 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

0.9 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Height

1.1mm

Minimum Operating Temperature

-65 °C

Детайли за продукта

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more