N-Channel MOSFET, 5.8 A, 100 V, 8-Pin PowerDI3333-8 Diodes Inc DMN10H099SFG-7

Номер на артикул на RS: 146-0954Марка: DiodesZetex№ по каталога на производителя: DMN10H099SFG-7
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

100 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.35mm

Typical Gate Charge @ Vgs

25.2 nC @ 10 V

Height

0.8mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.77V

Страна на произход

China

Детайли за продукта

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Информацията за складовите наличности временно не е налична.

€ 0,256

Each (On a Reel of 2000) (ex VAT)

N-Channel MOSFET, 5.8 A, 100 V, 8-Pin PowerDI3333-8 Diodes Inc DMN10H099SFG-7

€ 0,256

Each (On a Reel of 2000) (ex VAT)

N-Channel MOSFET, 5.8 A, 100 V, 8-Pin PowerDI3333-8 Diodes Inc DMN10H099SFG-7
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

100 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.35mm

Typical Gate Charge @ Vgs

25.2 nC @ 10 V

Height

0.8mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.77V

Страна на произход

China

Детайли за продукта

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more