Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
1.42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Number of Elements per Chip
1
Length
4.95mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
10.5 nC @ 10 V
Width
3.95mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 6,25
€ 0,25 Each (In a Pack of 25) (ex VAT)
Стандарт
25
€ 6,25
€ 0,25 Each (In a Pack of 25) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
25
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 25 - 100 | € 0,25 | € 6,25 |
| 125+ | € 0,135 | € 3,38 |
Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
1.42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Number of Elements per Chip
1
Length
4.95mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
10.5 nC @ 10 V
Width
3.95mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта


