Технически документи
Спецификации
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
71 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
9.1 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Страна на произход
China
Детайли за продукта
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
25
Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
25
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
71 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
9.1 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Страна на произход
China
Детайли за продукта


