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Diodes Inc P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 DMG3415U-7-57

Номер на артикул на RS: 182-7104PМарка: DiodesZetex№ по каталога на производителя: DMG3415U-7-57
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

71 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

9.1 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Automotive Standard

AEC-Q101

Страна на произход

China

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Информацията за складовите наличности временно не е налична.

€ 21,59

€ 0,108 Each (Supplied on a Reel) (ex VAT)

Diodes Inc P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 DMG3415U-7-57
Изберете тип опаковка

€ 21,59

€ 0,108 Each (Supplied on a Reel) (ex VAT)

Diodes Inc P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 DMG3415U-7-57
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Ролка
200 - 400€ 0,108€ 10,79
500 - 900€ 0,087€ 8,68
1000 - 1900€ 0,079€ 7,86
2000+€ 0,073€ 7,27

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

71 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

9.1 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Automotive Standard

AEC-Q101

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more