Dual N/P-Channel MOSFET, 640 mA, 870 mA, 20 V, 6-Pin SOT-563 Diodes Inc DMG1016V-7
Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
640 mA, 870 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.3 Ω, 700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
530 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Width
1.25mm
Transistor Material
Si
Typical Gate Charge @ Vgs
0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Height
0.6mm
Страна на произход
China
Детайли за продукта
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
50
P.O.A.
50
Ideate. Create. Collaborate
JOIN FOR FREE
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Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
640 mA, 870 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.3 Ω, 700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
530 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Width
1.25mm
Transistor Material
Si
Typical Gate Charge @ Vgs
0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Height
0.6mm
Страна на произход
China
Детайли за продукта
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products