Технически документи
Спецификации
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
460 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
270 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Typical Gate Charge @ Vgs
0.58 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.7mm
Width
0.85mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.8mm
Страна на произход
China
Детайли за продукта
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,03
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
€ 0,03
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
Технически документи
Спецификации
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
460 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
270 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Typical Gate Charge @ Vgs
0.58 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.7mm
Width
0.85mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.8mm
Страна на произход
China
Детайли за продукта