Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
290 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
1
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.737 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Страна на произход
China
Детайли за продукта
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 98,88
€ 0,033 Each (On a Reel of 3000) (ex VAT)
3000
€ 98,88
€ 0,033 Each (On a Reel of 3000) (ex VAT)
Информацията за складовите наличности временно не е налична.
3000
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Ролка |
|---|---|---|
| 3000 - 6000 | € 0,033 | € 98,88 |
| 9000+ | € 0,031 | € 92,06 |
Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
290 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
1
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.737 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Страна на произход
China
Детайли за продукта


