Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
2.1 A, 5.2 A
Maximum Drain Source Voltage
20 V
Package Type
TSOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
56 mΩ, 168 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
12 nC @ 10 V, 14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
2
Width
1.65mm
Length
2.95mm
Minimum Operating Temperature
-55 °C
Height
0.9mm
Страна на произход
China
Детайли за продукта
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 61,95
€ 0,103 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
600
€ 61,95
€ 0,103 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
600
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Ролка |
---|---|---|
600 - 1450 | € 0,103 | € 5,16 |
1500+ | € 0,076 | € 3,81 |
Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
2.1 A, 5.2 A
Maximum Drain Source Voltage
20 V
Package Type
TSOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
56 mΩ, 168 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
12 nC @ 10 V, 14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
2
Width
1.65mm
Length
2.95mm
Minimum Operating Temperature
-55 °C
Height
0.9mm
Страна на произход
China
Детайли за продукта