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Diodes Inc N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138-7-F

Номер на артикул на RS: 738-4939PМарка: DiodesZetex№ по каталога на производителя: BSS138-7-F
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Информацията за складовите наличности временно не е налична.

€ 21,71

€ 0,043 Each (Supplied on a Reel) (ex VAT)

Diodes Inc N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138-7-F
Изберете тип опаковка

€ 21,71

€ 0,043 Each (Supplied on a Reel) (ex VAT)

Diodes Inc N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138-7-F
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Ролка
500 - 900€ 0,043€ 4,34
1000 - 2400€ 0,041€ 4,11
2500 - 4900€ 0,04€ 3,99
5000+€ 0,039€ 3,87

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more