Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Страна на произход
China
Детайли за продукта
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,252
Each (Supplied on a Reel) (ex VAT)
100
€ 0,252
Each (Supplied on a Reel) (ex VAT)
100
Купете в насипно състояние
количество | Единична цена | Per Ролка |
---|---|---|
100 - 400 | € 0,252 | € 25,22 |
500 - 900 | € 0,155 | € 15,53 |
1000 - 2400 | € 0,151 | € 15,06 |
2500 - 4900 | € 0,141 | € 14,13 |
5000+ | € 0,133 | € 13,31 |
Технически документи
Спецификации
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Страна на произход
China
Детайли за продукта