Cypress Semiconductor 1Mbit Parallel FRAM Memory 32-Pin TSOP, FM28V100-TG
Технически документи
Спецификации
Memory Size
1Mbit
Organisation
128K x 8 bit
Interface Type
Parallel
Maximum Random Access Time
60ns
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
32
Dimensions
11.9 x 8.1 x 1.05mm
Maximum Operating Supply Voltage
3.6 V
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
128K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Детайли за продукта
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
1
P.O.A.
1
Ideate. Create. Collaborate
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Технически документи
Спецификации
Memory Size
1Mbit
Organisation
128K x 8 bit
Interface Type
Parallel
Maximum Random Access Time
60ns
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
32
Dimensions
11.9 x 8.1 x 1.05mm
Maximum Operating Supply Voltage
3.6 V
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
128K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Детайли за продукта
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products