Infineon SRAM, CY62157ELL-45ZSXI- 8Mbit

Технически документи
Спецификации
Memory Size
8Mbit
Organisation
512k x 16 bit
Number of Words
512K
Number of Bits per Word
16bit
Maximum Random Access Time
45ns
Address Bus Width
16bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
44
Dimensions
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
5.5 V
Height
1.04mm
Maximum Operating Temperature
+85 °C
Length
18.51mm
Width
10.26mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Страна на произход
United States
Детайли за продукта
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
SRAM (Static Random Access Memory)
Запитване за цена
Производствен пакет (Тава)
1
Запитване за цена
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тава)
1
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Memory Size
8Mbit
Organisation
512k x 16 bit
Number of Words
512K
Number of Bits per Word
16bit
Maximum Random Access Time
45ns
Address Bus Width
16bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
44
Dimensions
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
5.5 V
Height
1.04mm
Maximum Operating Temperature
+85 °C
Length
18.51mm
Width
10.26mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Страна на произход
United States
Детайли за продукта
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

