Infineon SRAM, CY62148ELL-45ZSXI- 4Mbit

Номер на артикул на RS: 124-2940PМарка: Cypress Semiconductor№ по каталога на производителя: CY62148ELL-45ZSXI
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Технически документи

Спецификации

Memory Size

4Mbit

Organisation

512K x 8 bit

Number of Words

512K

Number of Bits per Word

8bit

Maximum Random Access Time

45ns

Address Bus Width

8bit

Clock Frequency

1MHz

Low Power

Yes

Mounting Type

Surface Mount

Package Type

TSOP

Pin Count

32

Dimensions

21.08 x 10.29 x 1.05mm

Height

1.05mm

Maximum Operating Supply Voltage

5.5 V

Minimum Operating Supply Voltage

4.5 V

Maximum Operating Temperature

+85 °C

Length

21.08mm

Width

10.29mm

Minimum Operating Temperature

-40 °C

Страна на произход

Taiwan, Province Of China

Детайли за продукта

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

SRAM (Static Random Access Memory)

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Запитване за цена

Infineon SRAM, CY62148ELL-45ZSXI- 4Mbit
Изберете тип опаковка

Запитване за цена

Infineon SRAM, CY62148ELL-45ZSXI- 4Mbit

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Memory Size

4Mbit

Organisation

512K x 8 bit

Number of Words

512K

Number of Bits per Word

8bit

Maximum Random Access Time

45ns

Address Bus Width

8bit

Clock Frequency

1MHz

Low Power

Yes

Mounting Type

Surface Mount

Package Type

TSOP

Pin Count

32

Dimensions

21.08 x 10.29 x 1.05mm

Height

1.05mm

Maximum Operating Supply Voltage

5.5 V

Minimum Operating Supply Voltage

4.5 V

Maximum Operating Temperature

+85 °C

Length

21.08mm

Width

10.29mm

Minimum Operating Temperature

-40 °C

Страна на произход

Taiwan, Province Of China

Детайли за продукта

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

SRAM (Static Random Access Memory)

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more