HMC580ST89E Analog Devices, RF Amplifier MMIC, 22 dB 1 GHz, 3-Pin SOT-89
Технически документи
Спецификации
Brand
Analog DevicesAmplifier Type
MMIC
Typical Power Gain
22 dB
Typical Output Power
22dBm
Typical Noise Figure
2.8dB
Number of Channels per Chip
1
Maximum Operating Frequency
1 GHz
Mounting Type
Surface Mount
Package Type
SOT-89
Pin Count
3
Dimensions
4.6 x 2.59 x 1.6mm
Height
1.6mm
Length
4.6mm
Series
Hittite
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+85 °C
Maximum Operating Supply Voltage
5 V
Width
2.59mm
Детайли за продукта
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.
Radio Frequency (RF) Amplifiers, Analog Devices
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P.O.A.
2
P.O.A.
2
Технически документи
Спецификации
Brand
Analog DevicesAmplifier Type
MMIC
Typical Power Gain
22 dB
Typical Output Power
22dBm
Typical Noise Figure
2.8dB
Number of Channels per Chip
1
Maximum Operating Frequency
1 GHz
Mounting Type
Surface Mount
Package Type
SOT-89
Pin Count
3
Dimensions
4.6 x 2.59 x 1.6mm
Height
1.6mm
Length
4.6mm
Series
Hittite
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+85 °C
Maximum Operating Supply Voltage
5 V
Width
2.59mm
Детайли за продукта
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.