Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Transistor Material
Si
Width
6.22mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
2.39mm
Детайли за продукта
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 2,26
Всеки (ex VAT)
1
€ 2,26
Всеки (ex VAT)
1
Купете в насипно състояние
количество | Единична цена |
---|---|
1 - 9 | € 2,26 |
10 - 49 | € 1,92 |
50 - 99 | € 1,80 |
100 - 249 | € 1,70 |
250+ | € 1,59 |
Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Transistor Material
Si
Width
6.22mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
2.39mm
Детайли за продукта