P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK Vishay Siliconix SQD40031EL_GE3

Name: P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK Vishay Siliconix SQD40031EL_GE3
Brand: Vishay Siliconix
SKU: 1783950
Availability: LimitedAvailability

Номер на артикул на RS: 178-3950Марка: Vishay Siliconix№ по каталога на производителя: SQD40031EL_GE3

Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

Vishay Siliconix

Channel Type

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

186 nC @ 10 V

Width

2.38mm

Transistor Material

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

6.22mm

Страна на произход

Taiwan, Province Of China

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 12,50

€ 1,25 Each (In a Pack of 10) (ex VAT)

P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK Vishay Siliconix SQD40031EL_GE3

Изберете тип опаковка

Стандарт

€ 12,50

€ 1,25 Each (In a Pack of 10) (ex VAT)

P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK Vishay Siliconix SQD40031EL_GE3

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Стандарт

Купете в насипно състояние

количество	Единична цена	Per Опаковка
10 - 90	€ 1,25	€ 12,50
100 - 490	€ 1,064	€ 10,64
500 - 990	€ 0,938	€ 9,38
1000+	€ 0,813	€ 8,13

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Технически документи

Спецификации

Brand

Vishay Siliconix

Channel Type

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

186 nC @ 10 V

Width

2.38mm

Transistor Material

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

6.22mm

Страна на произход

Taiwan, Province Of China