P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3
Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
30 V
Package Type
1212
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Length
3.15mm
Typical Gate Charge @ Vgs
39 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
3.15mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Height
1.07mm
Страна на произход
China
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
3000
P.O.A.
3000
Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
30 V
Package Type
1212
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Length
3.15mm
Typical Gate Charge @ Vgs
39 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
3.15mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Height
1.07mm
Страна на произход
China