N-Channel MOSFET, 38 A, 30 V, 8-Pin SOP Toshiba TPH8R903NL,LQ(S
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
9.8 nC @ 10 V
Height
0.95mm
Forward Diode Voltage
1.2V
Страна на произход
Japan
Детайли за продукта
MOSFET Transistors, Toshiba
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 7,34
€ 0,367 Each (In a Pack of 20) (ex VAT)
20
€ 7,34
€ 0,367 Each (In a Pack of 20) (ex VAT)
20
Купете в насипно състояние
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 20 - 80 | € 0,367 | € 7,34 |
| 100 - 180 | € 0,336 | € 6,72 |
| 200 - 980 | € 0,329 | € 6,58 |
| 1000 - 1980 | € 0,316 | € 6,32 |
| 2000+ | € 0,309 | € 6,17 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
9.8 nC @ 10 V
Height
0.95mm
Forward Diode Voltage
1.2V
Страна на произход
Japan
Детайли за продукта
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products