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Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 Toshiba SSM6N7002KFU,LF(T

Номер на артикул на RS: 236-3582Марка: Toshiba№ по каталога на производителя: SSM6N7002KFU,LF(T
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

US6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.2e+006 Ω

Maximum Gate Threshold Voltage

2.1V

Number of Elements per Chip

2

Transistor Material

Silicon

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 0,026

Each (In a Pack of 200) (ex VAT)

Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 Toshiba SSM6N7002KFU,LF(T
Изберете тип опаковка

€ 0,026

Each (In a Pack of 200) (ex VAT)

Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 Toshiba SSM6N7002KFU,LF(T
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

US6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.2e+006 Ω

Maximum Gate Threshold Voltage

2.1V

Number of Elements per Chip

2

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more