Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
8 V
Package Type
DSBGA
Mounting Type
Surface Mount
Pin Count
9
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.5mm
Typical Gate Charge @ Vgs
18.9 nC @ 4 V
Width
1.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Height
0.35mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Страна на произход
Philippines
Детайли за продукта
P-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
250
P.O.A.
250
Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
8 V
Package Type
DSBGA
Mounting Type
Surface Mount
Pin Count
9
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.5mm
Typical Gate Charge @ Vgs
18.9 nC @ 4 V
Width
1.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Height
0.35mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Страна на произход
Philippines
Детайли за продукта