Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
30 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
0.64mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.04mm
Typical Gate Charge @ Vgs
1.01 nC @ 4.5 V
Number of Elements per Chip
1
Height
0.35mm
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Страна на произход
Malaysia
Детайли за продукта
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
250
P.O.A.
250
Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
30 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
0.64mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.04mm
Typical Gate Charge @ Vgs
1.01 nC @ 4.5 V
Number of Elements per Chip
1
Height
0.35mm
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Страна на произход
Malaysia
Детайли за продукта