Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
12 V
Package Type
DSBGA
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
15.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1mm
Typical Gate Charge @ Vgs
8.6 nC @ 0 V
Width
1.49mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
0.28mm
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
10
P.O.A.
10
Технически документи
Спецификации
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
12 V
Package Type
DSBGA
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
15.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1mm
Typical Gate Charge @ Vgs
8.6 nC @ 0 V
Width
1.49mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
0.28mm