STMicroelectronics MDmesh DM2 N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-220 STP43N60DM2
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Series
MDmesh DM2
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
93 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
10.4mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.6mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Страна на произход
China
Детайли за продукта
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
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P.O.A.
Each (In a Tube of 50) (ex VAT)
50
P.O.A.
Each (In a Tube of 50) (ex VAT)
50
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Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Series
MDmesh DM2
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
93 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
10.4mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.6mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Страна на произход
China
Детайли за продукта
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products