SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin TO-220FP STMicroelectronics STP33N60DM6
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Series
ST
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.115 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Transistor Material
SiC
Number of Elements per Chip
1
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 3,982
Each (In a Tube of 50) (ex VAT)
50
€ 3,982
Each (In a Tube of 50) (ex VAT)
50
Купете в насипно състояние
| количество | Единична цена | Per Тръба |
|---|---|---|
| 50 - 50 | € 3,982 | € 199,10 |
| 100 - 200 | € 3,317 | € 165,84 |
| 250 - 450 | € 2,883 | € 144,14 |
| 500 - 950 | € 2,808 | € 140,38 |
| 1000+ | € 2,74 | € 136,98 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Series
ST
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.115 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Transistor Material
SiC
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products