STMicroelectronics STGW8M120DF3 IGBT, 16 A @ +25°C 1200 V, 3-Pin TO, Through Hole
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current
16 A @ +25°C
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
167 W
Package Type
TO
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.75 x 5.15 x 20.15mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
542pF
Maximum Operating Temperature
+175 °C
Energy Rating
1.24mJ
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
2
P.O.A.
2
Технически документи
Спецификации
Brand
STMicroelectronicsMaximum Continuous Collector Current
16 A @ +25°C
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
1
Maximum Power Dissipation
167 W
Package Type
TO
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.75 x 5.15 x 20.15mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
542pF
Maximum Operating Temperature
+175 °C
Energy Rating
1.24mJ