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STMicroelectronics MDmesh M2 N-Channel MOSFET, 5.5 A, 650 V, 3-Pin DPAK STD9N60M2

Номер на артикул на RS: 786-3628Марка: STMicroelectronics№ по каталога на производителя: STD9N60M2
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

780 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

6.2mm

Minimum Operating Temperature

-55 °C

Height

2.4mm

Детайли за продукта

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 5,09

€ 1,017 Each (In a Pack of 5) (ex VAT)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 5.5 A, 650 V, 3-Pin DPAK STD9N60M2
Изберете тип опаковка

€ 5,09

€ 1,017 Each (In a Pack of 5) (ex VAT)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 5.5 A, 650 V, 3-Pin DPAK STD9N60M2
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

780 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

6.2mm

Minimum Operating Temperature

-55 °C

Height

2.4mm

Детайли за продукта

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more