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STMicroelectronics STripFET N-Channel MOSFET, 16 A, 60 V, 3-Pin DPAK STD16NF06T4

Номер на артикул на RS: 168-7562Марка: STMicroelectronics№ по каталога на производителя: STD16NF06T4
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

60 V

Series

STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.2mm

Length

6.6mm

Typical Gate Charge @ Vgs

14.1 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

2.4mm

Детайли за продукта

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 983,48

€ 0,393 Each (On a Reel of 2500) (ex VAT)

STMicroelectronics STripFET N-Channel MOSFET, 16 A, 60 V, 3-Pin DPAK STD16NF06T4

€ 983,48

€ 0,393 Each (On a Reel of 2500) (ex VAT)

STMicroelectronics STripFET N-Channel MOSFET, 16 A, 60 V, 3-Pin DPAK STD16NF06T4
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

60 V

Series

STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.2mm

Length

6.6mm

Typical Gate Charge @ Vgs

14.1 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

2.4mm

Детайли за продукта

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more