Технически документи
Спецификации
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
125 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
20.15 x 15.75 x 5.15mm
Maximum Operating Temperature
+150 °C
Детайли за продукта
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
€ 63,22
€ 2,107 Each (In a Tube of 30) (ex VAT)
30
€ 63,22
€ 2,107 Each (In a Tube of 30) (ex VAT)
30
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Тръба |
---|---|---|
30 - 30 | € 2,107 | € 63,22 |
60+ | € 2,002 | € 60,07 |
Технически документи
Спецификации
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
125 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
20.15 x 15.75 x 5.15mm
Maximum Operating Temperature
+150 °C
Детайли за продукта
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.