Вземете 7 % отстъпка за всички онлайн поръчки след регистрация с RS.

регистрирайте се сега

Semikron SKM50GB12T4 Dual Half Bridge IGBT Module, 81 A 1200 V, 7-Pin SEMITRANS2, Panel Mount

Номер на артикул на RS: 687-4967Марка: Semikron№ по каталога на производителя: SKM50GB12T4
brand-logo
Преглед на всички в IGBTs

Технически документи

Спецификации

Maximum Continuous Collector Current

81 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

SEMITRANS2

Configuration

Dual Half Bridge

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30.1mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Детайли за продукта

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 87,27

Всеки (ex VAT)

Semikron SKM50GB12T4 Dual Half Bridge IGBT Module, 81 A 1200 V, 7-Pin SEMITRANS2, Panel Mount

€ 87,27

Всеки (ex VAT)

Semikron SKM50GB12T4 Dual Half Bridge IGBT Module, 81 A 1200 V, 7-Pin SEMITRANS2, Panel Mount
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична цена
1 - 1€ 87,27
2 - 4€ 82,91
5 - 9€ 76,80
10 - 19€ 72,96
20+€ 69,30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Maximum Continuous Collector Current

81 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

SEMITRANS2

Configuration

Dual Half Bridge

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30.1mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Детайли за продукта

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more