Технически документи
Спецификации
Brand
SemikronMaximum Continuous Collector Current
618 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITRANS3
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
106.4 x 61.4 x 30.5mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Width
61.4mm
Детайли за продукта
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 239,00
Всеки (ex VAT)
1
€ 239,00
Всеки (ex VAT)
1
Купете в насипно състояние
количество | Единична цена |
---|---|
1 - 9 | € 239,00 |
10 - 19 | € 227,28 |
20 - 49 | € 215,82 |
50 - 249 | € 205,06 |
250+ | € 195,03 |
Технически документи
Спецификации
Brand
SemikronMaximum Continuous Collector Current
618 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITRANS3
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
106.4 x 61.4 x 30.5mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Width
61.4mm
Детайли за продукта
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.