Технически документи
Спецификации
Brand
Renesas ElectronicsTransistor Type
NPN + PNP
Maximum DC Collector Current
65 mA
Maximum Collector Emitter Voltage
8 V
Package Type
SOIC
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Isolated
Maximum Collector Base Voltage
12 V
Maximum Emitter Base Voltage
5.5 V
Maximum Operating Frequency
8000 MHz
Pin Count
16
Number of Elements per Chip
5
Dimensions
1.5 x 10 x 4mm
Maximum Operating Temperature
+125 °C
Страна на произход
Philippines
Детайли за продукта
Transistor Arrays, Intersil
Complete isolation between transistors
Bipolar Transistors, Intersil
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
48
P.O.A.
48
Технически документи
Спецификации
Brand
Renesas ElectronicsTransistor Type
NPN + PNP
Maximum DC Collector Current
65 mA
Maximum Collector Emitter Voltage
8 V
Package Type
SOIC
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Isolated
Maximum Collector Base Voltage
12 V
Maximum Emitter Base Voltage
5.5 V
Maximum Operating Frequency
8000 MHz
Pin Count
16
Number of Elements per Chip
5
Dimensions
1.5 x 10 x 4mm
Maximum Operating Temperature
+125 °C
Страна на произход
Philippines
Детайли за продукта
Transistor Arrays, Intersil
Complete isolation between transistors