Технически документи
Спецификации
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.1mm
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Страна на произход
Malaysia
Детайли за продукта
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,31
Each (On a Reel of 3000) (ex VAT)
3000
€ 0,31
Each (On a Reel of 3000) (ex VAT)
3000
Технически документи
Спецификации
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.1mm
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Страна на произход
Malaysia
Детайли за продукта