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N-Channel MOSFET, 240 mA, 20 V, 3-Pin SC-75 onsemi NTA4001NT1G

Номер на артикул на RS: 178-7609Марка: onsemi№ по каталога на производителя: NTA4001NT1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

240 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-75

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.65mm

Width

0.9mm

Minimum Operating Temperature

-55 °C

Height

0.8mm

Детайли за продукта

N-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 0,057

Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 240 mA, 20 V, 3-Pin SC-75 onsemi NTA4001NT1G

€ 0,057

Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 240 mA, 20 V, 3-Pin SC-75 onsemi NTA4001NT1G
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Ролка
3000 - 3000€ 0,057€ 172,35
6000+€ 0,055€ 165,17

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

240 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-75

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.65mm

Width

0.9mm

Minimum Operating Temperature

-55 °C

Height

0.8mm

Детайли за продукта

N-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more