Технически документи
Спецификации
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
120 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
110 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.58 x 3.86 x 4.58mm
Maximum Operating Temperature
+150 °C
Детайли за продукта
Small Signal NPN Transistors, Over 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,082
Each (Supplied as a Tape) (ex VAT)
Производствен пакет (Лента)
1000
€ 0,082
Each (Supplied as a Tape) (ex VAT)
Производствен пакет (Лента)
1000
Технически документи
Спецификации
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
120 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
110 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.58 x 3.86 x 4.58mm
Maximum Operating Temperature
+150 °C
Детайли за продукта
Small Signal NPN Transistors, Over 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.