Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.9mm
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Number of Elements per Chip
1
Height
16.07mm
Forward Diode Voltage
1.3V
Minimum Operating Temperature
-55 °C
Страна на произход
China
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
1000
P.O.A.
1000
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.9mm
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Number of Elements per Chip
1
Height
16.07mm
Forward Diode Voltage
1.3V
Minimum Operating Temperature
-55 °C
Страна на произход
China