Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20 to 40mA
Maximum Drain Source Voltage
25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Common Source
Configuration
Dual
Mounting Type
Surface Mount
Package Type
CPH
Pin Count
6
Drain Gate On-Capacitance
6pF
Source Gate On-Capacitance
2.3pF
Dimensions
2.9 x 1.6 x 0.9mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.9mm
Width
1.6mm
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,553
Each (In a Pack of 10) (ex VAT)
10
€ 0,553
Each (In a Pack of 10) (ex VAT)
10
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
10 - 10 | € 0,553 | € 5,53 |
20 - 40 | € 0,349 | € 3,48 |
50 - 90 | € 0,302 | € 3,02 |
100 - 190 | € 0,265 | € 2,66 |
200+ | € 0,26 | € 2,60 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20 to 40mA
Maximum Drain Source Voltage
25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Common Source
Configuration
Dual
Mounting Type
Surface Mount
Package Type
CPH
Pin Count
6
Drain Gate On-Capacitance
6pF
Source Gate On-Capacitance
2.3pF
Dimensions
2.9 x 1.6 x 0.9mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.9mm
Width
1.6mm
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.