Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Length
2.9mm
Height
1.1mm
Maximum Operating Temperature
+150 °C
Width
1.5mm
Страна на произход
China
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,311
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
€ 0,311
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
Купете в насипно състояние
количество | Единична цена | Per Ролка |
---|---|---|
100 - 225 | € 0,311 | € 7,78 |
250 - 475 | € 0,269 | € 6,72 |
500 - 975 | € 0,236 | € 5,91 |
1000+ | € 0,216 | € 5,40 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Length
2.9mm
Height
1.1mm
Maximum Operating Temperature
+150 °C
Width
1.5mm
Страна на произход
China
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.