Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Width
1.5mm
Length
2.9mm
Height
1.1mm
Maximum Operating Temperature
+150 °C
Страна на произход
China
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,35
Each (Supplied on a Reel) (ex VAT)
25
€ 0,35
Each (Supplied on a Reel) (ex VAT)
25
Купете в насипно състояние
количество | Единична цена | Per Ролка |
---|---|---|
25 - 100 | € 0,35 | € 8,74 |
125 - 225 | € 0,316 | € 7,89 |
250 - 600 | € 0,282 | € 7,05 |
625 - 1225 | € 0,241 | € 6,02 |
1250+ | € 0,184 | € 4,59 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Width
1.5mm
Length
2.9mm
Height
1.1mm
Maximum Operating Temperature
+150 °C
Страна на произход
China
Детайли за продукта
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.