Технически документи
Спецификации
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-17 A
Maximum Collector Emitter Voltage
-250 V
Package Type
TO-264
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55, 80
Transistor Configuration
Single
Maximum Collector Base Voltage
-250 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20 x 5 x 26mm
Детайли за продукта
Power PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 4,764
Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
5
€ 4,764
Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
5
Технически документи
Спецификации
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-17 A
Maximum Collector Emitter Voltage
-250 V
Package Type
TO-264
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55, 80
Transistor Configuration
Single
Maximum Collector Base Voltage
-250 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20 x 5 x 26mm
Детайли за продукта
Power PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.