onsemi FGB40T65SPD-F085, P-Channel IGBT, 80 A 650 V, 2+Tab-Pin D2PAK (TO-263), Surface Mount
Технически документи
Спецификации
Brand
ON SemiconductorMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
267 W
Number of Transistors
1
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
P
Pin Count
2+Tab
Transistor Configuration
Single
Dimensions
10.67 x 9.65 x 4.83mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
1520pF
Maximum Operating Temperature
+175 °C
Automotive Standard
AEC-Q101
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
800
P.O.A.
800
Технически документи
Спецификации
Brand
ON SemiconductorMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
267 W
Number of Transistors
1
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
P
Pin Count
2+Tab
Transistor Configuration
Single
Dimensions
10.67 x 9.65 x 4.83mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
1520pF
Maximum Operating Temperature
+175 °C
Automotive Standard
AEC-Q101