Технически документи
Спецификации
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
420 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
Производствен пакет (Ролка)
100
P.O.A.
Производствен пакет (Ролка)
100
Технически документи
Спецификации
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
420 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm