Технически документи
Спецификации
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
1mm
Страна на произход
Malaysia
Детайли за продукта
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,163
Each (Supplied on a Reel) (ex VAT)
200
€ 0,163
Each (Supplied on a Reel) (ex VAT)
200
Технически документи
Спецификации
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
1mm
Страна на произход
Malaysia
Детайли за продукта