Технически документи
Спецификации
Brand
IXYSMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
23
Transistor Configuration
3 Phase
Dimensions
107.5 x 45 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Детайли за продукта
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
6
P.O.A.
6
Технически документи
Спецификации
Brand
IXYSMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
23
Transistor Configuration
3 Phase
Dimensions
107.5 x 45 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Детайли за продукта
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.