N-Channel MOSFET, 7.3 A, 650 V, 3-Pin DPAK Infineon SPD07N60C3BTMA1

Номер на артикул на RS: 752-8498PМарка: Infineon№ по каталога на производителя: SPD07N60C3BTMA1
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

7.3 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

21 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

6.73mm

Number of Elements per Chip

1

Width

6.22mm

Transistor Material

Si

Series

CoolMOS C3

Minimum Operating Temperature

-55 °C

Height

2.41mm

Детайли за продукта

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 7.3 A, 650 V, 3-Pin DPAK Infineon SPD07N60C3BTMA1
Изберете тип опаковка

P.O.A.

N-Channel MOSFET, 7.3 A, 650 V, 3-Pin DPAK Infineon SPD07N60C3BTMA1
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

7.3 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

21 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

6.73mm

Number of Elements per Chip

1

Width

6.22mm

Transistor Material

Si

Series

CoolMOS C3

Minimum Operating Temperature

-55 °C

Height

2.41mm

Детайли за продукта

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more