Технически документи
Спецификации
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Series
Si4435DYPbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4mm
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Typical Power Gain
0
€ 6,73
€ 0,673 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
10
€ 6,73
€ 0,673 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
10
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Ролка |
---|---|---|
10 - 90 | € 0,673 | € 6,73 |
100 - 240 | € 0,638 | € 6,38 |
250 - 490 | € 0,612 | € 6,12 |
500 - 990 | € 0,586 | € 5,86 |
1000+ | € 0,545 | € 5,45 |
Технически документи
Спецификации
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Series
Si4435DYPbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4mm
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Typical Power Gain
0