Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
34 nC @ 5 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Height
2.39mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Страна на произход
China
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,406
Each (On a Reel of 2000) (ex VAT)
2000
€ 0,406
Each (On a Reel of 2000) (ex VAT)
2000
Купете в насипно състояние
количество | Единична цена | Per Ролка |
---|---|---|
2000 - 2000 | € 0,406 | € 811,63 |
4000+ | € 0,386 | € 771,87 |
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
6.22mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
34 nC @ 5 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Height
2.39mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Страна на произход
China