Вземете 7 % отстъпка за всички онлайн поръчки след регистрация с RS.

регистрирайте се сега

N-Channel MOSFET, 45 A, 60 V, 3-Pin I2PAK Infineon IPI45N06S409AKSA2

Номер на артикул на RS: 218-3061Марка: Infineon№ по каталога на производителя: IPI45N06S409AKSA2
brand-logo
Преглед на всички в MOSFETs

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.0092 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 30,26

€ 0,605 Each (In a Tube of 50) (ex VAT)

N-Channel MOSFET, 45 A, 60 V, 3-Pin I2PAK Infineon IPI45N06S409AKSA2

€ 30,26

€ 0,605 Each (In a Tube of 50) (ex VAT)

N-Channel MOSFET, 45 A, 60 V, 3-Pin I2PAK Infineon IPI45N06S409AKSA2
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.0092 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more