Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
176 A
Maximum Drain Source Voltage
100 V
Series
IPB020N10N5
Package Type
TO 263
Series
OptiMOS™ 5
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
11.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
168 nC @ 10 V
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 6,313
Each (In a Pack of 5) (ex VAT)
Стандарт
5
€ 6,313
Each (In a Pack of 5) (ex VAT)
Стандарт
5
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
5 - 20 | € 6,313 | € 31,57 |
25 - 95 | € 5,372 | € 26,86 |
100 - 245 | € 4,652 | € 23,26 |
250 - 495 | € 4,41 | € 22,05 |
500+ | € 3,952 | € 19,76 |
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
176 A
Maximum Drain Source Voltage
100 V
Series
IPB020N10N5
Package Type
TO 263
Series
OptiMOS™ 5
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
11.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
168 nC @ 10 V
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V